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The interaction between nitric oxide (NO) molecules and the organic crystal surface of indolo[3,2‐b]carbazole (ICZ) can influence the charge carrier transport process of ICZ single crystal field‐effect transistors. Random NO molecules come in contact with the crystal surface, initiate the reaction between NO and ICZ, and affect the threshold voltage of the device. As reported by Hui Jiang, Christian...
Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2‐b]carbazole (ICZ), have been synthesized. In addition, field‐effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼106. The transistors exhibit sensitivity to nitric oxide (NO). The gas‐sensitive behavior indicates...
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