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A novel small-signal model for bulk FinFETs is presented. A parallel combination of resistance-inductance networks originated from the self-heating is obtained. A new transfer gain model is developed. An analytical method to extract the model parameters is proposed. The model is validated using silicon Multi-Fin MOSFET manufactured in SMICs 14 nm bulk FinFET technology. Excellent agreements are achieved...
A novel model method for III–V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector fitting (VF) method The model renders excellent agreement with the measured and simulated data over 1 to 100 GHz, for a 2×150µm GaAs HEMT device manufactured in CETC-55 150nm GaAs pHEMT...
A novel wideband 1-π equivalent circuit model for on-chip spiral inductors is presented. A substrate network, consisting of R/L/C, is proposed to model the broadband loss mechanisms in the silicon substrate. The skin and distributed effects for windings have been taken into account. A series of inductors with different geometries are fabricated in standard 0.18-μm 1P6M RF CMOS process to verify the...
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