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We present the design and characterization of a silicon PN junction traveling-wave Mach–Zehnder modulator near 1550nm wavelength. The device shows 30GHz bandwidth at 1V reverse bias, with a 2.7V-cm V π L π and accordingly a 9-V small-signal V π . The insertion loss of the phase shifter is 3.6dB±0.4dB. The device performance metrics in combination show significant improvement...
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