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Zn3As2 is a promising earth‐abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain‐free Zn3As2 nanosails, grown by metal‐organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent...
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