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Bi-layer ZnO films with 2wt.% Al (AZO; ZnO:Al) and 4wt.% Ga-doped (GZO; ZnO:Ga) were deposited on the non-buffered and buffered c(0001)-sapphire(Al 2 O 3 ) substrates respectively by Pulsed Laser Deposition (PLD). The effect of a ZnO buffer layer on the crystallinity and electrical properties of the GZO thin films was investigated. X-ray Diffraction (XRD) peaks and High Resolution...
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