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Wavelength bistability between 1245nm and 1295nm is demonstrated in a multi-section quantum-dot laser, controlled via the reverse bias on the saturable absorber. Continuous-wave or mode-locked regimes are achieved (output power up to 25mW and 17mW).
We present fabrication of 1.3-µm InAs QD-VCSELs and arrays. The output power of single VCSEL exceeds 1.2 mW. Modulation bandwidth of 2.65 GHz and 2.5 GHz are achieved for single-mode and multi-mode VCSELs. Maximum output power of 28 mW is demonstrated for VCSEL arrays with threshold current of 50 mA.
In this paper, we present results from room-temperature continuous-wave operation of 1.3-mum p-doped InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with high T0 of ~510 K and low threshold current density of ~65 A/cm2 per QD layer. The highest output power from the device is over 0.74 mW. The temperature characteristics of the devices are investigated. It is demonstrated...
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