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We investigate the effect of passivation structure on the optical mode distribution and characteristics of the edge emitting ridge waveguide AlGaInP–GaInP visible laser diodes (LDs). For conventional designs of single-layer Si 3 N 4 or SiO 2 passivation, the variation of lateral near-field confinement and the horizontal far-field (FF) divergence can be determined via the modification...
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