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We report on the temperature-dependent photoluminescence (PL) properties of n-type and p-type ZnO films codoped with N and Al. For the n-type film, the dominant emission at low temperature is exciton bound to neutral donors, while for the p-type film it is exciton bound to neutral acceptor at ∼3.33eV. Four defect or impurity levels, including N acceptor, residual acceptor, and two doping-induced unknown...
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