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We have fabricated PI‐based IGZO TFTs with Cu electrode which exhibit excellent electrical properties and high mechanical reliabilities to meet the demand for large area flexible display. The IGZO TFTs show +0.26 V and −0.34 V of ΔVth under positive bias temperature stress and negative bias temperature illumination stress for 10 hours, respectively, and the Vth shift after laser lift‐off and bending...
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