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We scaled the memristor devices in a crossbar arrays down to 8 nm using nanoimprint lithography. With reactive sputtering, we tuned the electrical properties of TiOx based memristors. We developed a silicon oxide device with ultra-thin layer chemically produced oxide that exhibited low voltage and electrode-dependent switching behavior. Finally, we integrated planar memristive devices with CMOS substrates,...
Our group focuses on developing better nanoscale memristor with improved performance, understanding the underlying device physics, and exploring new applications for this novel device. This paper introduces our recent work on memristor device engineering and CMOS integration. We have fabricated the smallest memristors (8 nm × 8 nm) in a crossbar array, with each of the device consumes orders of magnitude...
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