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The density of flash memory chips has doubled every two years in the past decade and the trend is expected to continue. The increasing capacity of NAND flash memory leads to large RAM footprint on address mapping management. This paper proposes a novel Demand-based block-level Address mapping scheme with a two-level Caching mechanism (DAC) for large-scale NAND flash storage systems. The objective...
Due to the variable garbage collection latency, NAND flash memory storage systems may suffer long system response time, especially when the flash memory is close to be full. Most of existing flash translation layer (FTL) schemes focus on improving the average response time but ignore to provide a desirable worst case response time upper bound. This paper proposes a Real-time Flash Translation Layer...
The increasing capacity of NAND flash memory leads to large RAM footprint on address mapping in the Flash Translation Layer (FTL) design. The demand-based approach can reduce the RAM footprint, but extra address translation overhead is also introduced which may degrade the system performance. This paper proposes a two-level caching mechanism to selectively cache the on-demand page-level address mappings...
NAND flash memory is widely used in embedded systems due to its non-volatility, shock resistance and high cell density. In recent years, various Flash Translation Layer (FTL) schemes (especially hybrid-level FTL schemes) have been proposed. Although these FTL schemes provide good solutions in terms of endurance and wear-leveling, none of them have considered to reuse free pages in both data blocks...
The new write constraints of multi-level cell (MLC) NAND flash memory make most of the existing flash translation layer (FTL) schemes inefficient or inapplicable. In this paper, we solve several fundamental problems in the design of MLC flash translation layer. The objective is to reduce the garbage collection overhead so as to reduce the average system response time. We make the key observation that...
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