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NAND flash memory has been widely deployed in embedded systems, personal computers, and data centers. While recent technology scaling and density improvement have reduced its price, they have also significantly shortened its endurance. In this paper, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time...
Similar to traditional NAND flash memory, triple-level cell (TLC) flash memory is used as secondary storage to meet the fast growing demands on storage capacity. TLC flash memory exhibits attractive features such as shock resistance, high density, low cost, non-volatility and low access latency natures. However, TLC flash memory also has some extra limitations, such as write disturbance, low performances...
The increasing capacity of NAND flash memory leads to large RAM footprint on address mapping in the Flash Translation Layer (FTL) design. The demand-based approach can reduce the RAM footprint, but extra address translation overhead is also introduced which may degrade the system performance. This paper proposes a two-level caching mechanism to selectively cache the on-demand page-level address mappings...
NAND flash memory is widely used in embedded systems due to its non-volatility, shock resistance and high cell density. In recent years, various Flash Translation Layer (FTL) schemes (especially hybrid-level FTL schemes) have been proposed. Although these FTL schemes provide good solutions in terms of endurance and wear-leveling, none of them have considered to reuse free pages in both data blocks...
The increasing capacity of NAND flash memory leads to large RAM footprint on address mapping in the Flash Translation Layer (FTL) design. This paper proposes a novel Demand-based block-level Address mapping scheme with two-level Caching mechanism (DAC) for large-scale NAND flash storage systems. The objective is to reduce RAM footprint without sacrificing too much system response time. In our technique,...
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