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Long and short buried-channel In0.7Ga0.3As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with alpha-Si passivation show much higher transconductance and an effective peak mobility of 3810 cm2/ V middots. Short-channel MOSFETs with a gate length of 160 nm display a current of 825 muA/mum at Vg - Vt = 1.6 V and peak transconductance of 715 muS/mum. In addition, the virtual...
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