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We report here the first use of electrical derivatives to predict threshold current degradation rates for InGaAsP, etched mesa BH lasers. Fast aging lasers are found to display a post-threshold I dV/dI temperature dependence which sets them apart from slow agers. This signature is explained in terms of a nonlinear current leakage path in the confinement layers. We propose the use of the I dV/dI temperature...
Accelerated life tests show that CdS/Cu2S solar-cell lifetimes increase with lower temperature, cyclic light and a nitrogen-gas ambient. A normal Arrhenius type of temperature dependence was found. Extrapolated lifetime for cells kept below 50?C in nitrogen gas with earth deployment exceeded twenty years. The probable decay mechanisms are thermal diffusion, formation of recombination centres and voltage-induced...
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