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We report the first demonstration of InAs FinFETs with fin width $\textrm {W}_{{\mathrm{fin}}}$ in the range 25–35 nm, formed by inductively coupled plasma etching. The channel comprises defect-free, lattice-matched InAs with fin height $\textrm {H}_{{\mathrm{fin}}}=20$ nm controlled by the use of an etch stop layer incorporated into the device heterostructure. For a gate length $\textrm {L}_{{{\textrm {g}}}}=1~\mu \text{m}$ ...
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