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Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package...
Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package...
Fuji Electric developed a 1200V class RC-IGBT based on our latest thin wafer process. The performance of this RC-IGBT shows the same relationship between conduction loss and switching loss as our 6th generation conventional IGBT and FWD. In addition its trade-off can be optimized for hard switching by lifetime killer. Calculations of the hard switching inverter loss and chip junction temperature (Tj)...
Fuji Electric developed a 1200V class RC-IGBT based on our latest thin wafer process. The performance of this RC-IGBT shows the same relationship between conduction loss and switching loss as our 6th generation conventional IGBT and FWD. In addition its trade-off can be optimized for hard switching by lifetime killer. Calculations of the hard switching inverter loss and chip junction temperature (Tj)...
Recently, many kinds of power conversion method are used to the applications, three-level inverter system was also widely used in many applications, because of its high-output voltage, or better waveform efficiency as features. On the other hand, conventional Neutral Point-Clamped (NPC) three-level inverter system using clamp diodes has demerit of in the number of semiconductor switches. In order...
This paper describes the mechanism of radiation EMI noise coming from power electronics and introduces the applied technology of Fuji 6th generation IGBT modules, which have drastically improved the trade-off of radiation EMI noise and power dissipation loss. The application of new packaging technology has achieved a reduction in radiation noise of about -5dB by reducing the radiation noise loop area...
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