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Technology challenges and solutions in the development and fabrication of high-density three dimensional (3D) chip integration structures have been investigated. Critical 3D integrated circuit (IC) enabling technologies, such as through silicon via (TSV), wiring and redistribution layer (RDL), wafer thinning and handling, micro-bump (μ-bump) processes and joining, that form the building blocks for...
In this work, we demonstrate the capability of Ecmp to meet the 45 nm and 32 nm technology node requirements in terms of topography behavior, the related electrical spread, lithography DOF budget and ULK compatibility.
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