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A technique for forming a nanosized gate of a high-power microwave transistor is proposed. The optimal exposure parameters of 950-PMMA-A2 and ELP-20 resists are established. The technological route of ion beam lithography with the use of multilayer resists is investigated. A technique for fabricating a continuous mesh of earthed alignment marks formed on the ion-sensitive resist to visualize the alignment...
A method of formation of three-dimensional silicon-based nanostructures by a mask formation with the use of focused ion beam, for following plasma etching, is presented. A surface relief pattern, with depths of less than 80 nm, dependent on a dose of interstitial ions, was formed by plasma etching of an undoped area. A range of values of a dose of Ga+ ion beam for silicon doping was determined. Three-dimensional...
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