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In this work, we investigated the influence of retrograde-well implantation on hetero-structure body-tied germanium (Ge) FinFET [1]. Using structural engineering, the retrograde well was fabricated prior to Ge epitaxy, which could avoid the activated temperature of dopant in Si substrate. With optimizing the implant condition, the p-Ge/n-Si hetero-structure junction exhibited high ION/IOFF ratio and...
Copper pillar bump interconnect technology, with its good electrical properties and electromigration resistance, is becoming the next key technology for fine pitch interconnection of chips. The study of the effect of copper pillar bump size on the interfacial diffusion reaction has directive significance to the application of copper pillar bump. This paper focuses on the effect of size on the reliability...
The purposed of this paper is to improve the corrosion resistance of connector application by plating ultrathin Ni-W film by reverse pulse current. Method of reverse pulse plating Ni-W alloy in the solution without Ni ion as well as the electrochemical behaviors of the plated thin film have been investigated. The results indicates that the corrosion resistance of the Ni layer is enhanced by the reverse...
The 3D finite element analysis model of Package-on-Package solder joints was set up based on Patran software. The natural frequency, vibration mode of the model was analyzed under the condition of random vibration, the stress and strain distribution and the strain power spectrum density of response curves of the Package-on-Package solder joints were obtained, and the random vibration fatigue life...
In this paper, the finite element model of optical interconnection module is established, and the finite element analysis of the model is carried out under the condition of random vibration loading based on ANSYS software. The distribution law of the stress and strain of the solder joint array is obtained. As an example, the stress and strain of the solder joint array with single factor variation...
With the rapid development of three-dimensional (3D) integration technology, the through silicon via (TSV) approach has become the main trend of study. However the protrusion of cooper in TSV (TSV-Cu) due to the thermal mismatch of different materials in TSV structure imposes serious reliability problems. In this paper therefore focuses on the TSV-Cu protrusion effect under different annealing conditions...
To solve the internal distribution problem of microgrid operation benefit, a benefit distribution method based on the economic operation and cooperative game theory is proposed, which can satisfy individual rationality and global efficiency. It can be used to estimate value of various participants in microgrid and provide references for payment and settlement inside microgrid as well. The influence...
Through-silicon via (TSV) is a critical technology for electrical connection in 3D integration and the formation of insulating layer is one of the most critical steps which directly influence the reliability of TSV package. In this article, silicon dioxide is obtained by a new method based on the formation of the porous silicon (PS). In this experiment, the HF solutions with the concentrations of...
In three-dimensional packaging (3D packaging) industry, through silicon via (TSV) technology is significant which acts as connection between chips and wafers. TSV technology achieves the interconnection through vertical vias and the formation of silicon vias mainly utilizes laser processing technique or deep reactive ion etching (DRIE) technique at the present stage. In this paper, an electrochemical...
For microelectronic applications, it is important to have good interfacial properties between copper and dielectric layers. To prevent Cu diffusion issue, Ti and Ta are commonly used as barrier layers. In redistribution layer (RDL) process, Parylene-C (PC) and Polybenzoxazoles (PBO) are applied to dielectric organic materials. Therefore, it is necessary to study the adhesion of Cu/barrier layer (Ta,...
Interface (IF) layers have great influence on the performance of InAs/GaSb type-II superlattice, which can not only balance the strain between adjacent layers, but also change the absorption cutoff wavelength and relative absorption strength. In this study, a modified k·p method based on envelope function approximation is used to theoretically investigate different IF influence on Auger recombination,...
The competitive adsorption between suppressor and accelerator is the crucial behavior to achieve void-free filling of TSV during electrodeposition. Convective velocity and potential on the reactive electrode surface are two important factors for adsorption of additives. In this paper, a method of calculating the competitively adsorptive parameter Kads is found to quantize the effect of these factors...
We report an adiabatic bend based on silicon shallow-etched waveguide using a sine-circle-sine design. The loss per 180° turn is 0.05 dB for 5 μm bend and 0.008 dB 10 μm bend for TE polarization, which are significantly lower than that of a circular bend.
In wireless communication networks, the amplitude, phase, and frequency of a radio-frequency (RF) carrier is modulated to carry data signals. Generally, amplitude-shift keying (ASK), phase-shift keying (PSK) and frequency-shift keying (FSK) are served as the basic digital modulation formats. They are also the fundamental modulation schemes to form advanced modulation formats such as quadrature amplitude...
In this paper, near field imaging is achieved by using near field to far field transformation. We use CST to simulate and calculate the near field scattering data of the target, and utilize planar near field to far field transformation to get far field scattering data. Then Range-Doppler algorithm is put into use to calculate the image of the targets.
We proposed a novel micro strip sensor based on Dual-D shaped Complementary Split Resonator (Dual-D CSR) in the microwave region. In this research,the distribution of the electric field and transmission response (S21) have been simulated. Besides, we also investigated the effect of the width between Dual-D on resonance characteristics. Furthermore, the process and the performance is illustrated when...
According to Babinet's principle a square complementary asymmetric split ring resonator (caSRR) is proposed. Interestingly, due to the particularity of the caSRR structure, it can be fabricated on a mental sheet without the substrate, which is named as Stereo-caSRR. A microwave sensor which consists of a rectangular waveguide loaded with the square stereo-caSRR is designed. Simulation results show...
We propose and experimentally demonstrate an on-chip microwave phase shifter based on Coupling-modulated Microring Resonators (CMR). CMR is a structure that connected the transmission port and upload port of the normal ring resonator. In this case, the transmission spectrum can be tuned by properly adjusting the phase shift accumulation in the connected waveguide of the CMR. A deep notch of the transmission...
A novel design of a reconfigurable patch antenna using PIN diodes is proposed to achieve frequency reconfigurable The operating frequency is electronically tuned by changing the state of diodes. If all the diodes is on the current directly go through the switch and current patch will reduce and antenna resonates at higher frequency and diverse effect has been observed for OFF condition of the PIN...
All-optical implementations of signal processing have attracted a great deal of attention due to the unique potential of this approach to overcome the bandwidth and speed bottleneck of electronic devices. Many all-optical signal processing techniques, offering processing bandwidths up to several THz, have been proposed and successfully employed in a wide range of areas, such as ultrafast telecommunications,...
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