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A significant improvement of output power and external quantum efficiency (EQE) for nonpolar a-plane (11-20) GaN light-emitting diodes (LEDs) on r-plane sapphire substrates has been demonstrated by using embedded pyramid-shape air-gap arrays on hexagonally patterned SiO layer. The air-gap structure was realized based on asymmetrical growth behavior of a-plane epitaxial lateral overgrowth (ELO)...
We report innovative highly reflective DBR structures based on the novel material BAlN. An experimental BAlN/AlN DBRs demonstrated a reflectivity of 60% and 82% at wavelengths of 282 nm and 311nm respectively.
A novel triangular resonator with a long evanescent field around the critical angle has been analysed and demonstrated for the first time. The sensitivity of the resonance shift used for changing the refractive index of 1 ?? 10-5 at the incidence angle of 18?? is 1.04 ?? 10-7 nm/RIU for transverse magnetic polarised light. An extinction ratio of 6 dB was observed near 1550 nm, where the incidence...
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