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We investigated n+SiCP stressors formation by C & P implantation with various amorphization techniques and using high temperature laser annealing SPE technique. Both monomer C and molecular C (C7H7) with P4 implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge, Xe or Sb to enhance the Csub level through SPE amorphous layer regrowth. A P dopant activation level of...
B36H44 molecular dopants were implanted at 100 eV and 1E15/cm2 B equivalent energy and dose to achieve Xj<7nm and selected wafers also had various PAI (pre-amorphizing implantation) using Ge 10 keV, Xe 14 keV and In 14 keV to create an amorphous layer 16-17 nm deep. All the wafers were MSA (msec annealed) by DSA laser at 1175??C, 1225??C, 1275??C and 1325??C and the results show that the Rs and...
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