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We have realized the first 10-Gbps direct modulation of a 1.3-mum-range laser diode with an InGaAs metamorphic buffer on a GaAs substrate. A 200-mum-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85degC, respectively. The maximum operating temperature was 135degC. This excellent performance is attributed to the high quality InGaAs metamorphic buffer.
We have realized 10-Gb/s direct modulation up to 100degC using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mum-range lasing and an increased number of QWs (six). This laser with a 200-mum-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies...
Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells are analyzed by using 6- and 8-band kmiddotp theory. It is shown that the 8-band model is necessary for the analysis of In(Ga)As/InGaAs quantum wells having strain larger than 2%. The photoluminescence peak wavelength and absorption spectra of InAs/InGaAs quantum wells with the strain of 3.2 % calculated by 8-band model...
We have successfully developed a 1.26 mum ridge waveguide laser diode with an InGaAs metamorphic buffer on an GaAs substrate grown by metal-organic vapor-phase epitaxy. This laser has achieved the highest operating temperature (188degC) reported for a metamorphic laser.
We have developed high performance ridge waveguide laser diodes on an InGaAs ternary substrate grown by a novel bulk crystal growth technique (TLZ method). A low indium content (In: 0.13) InGaAs substrate improves the thermal conductivity and enables laser operation even with a short cavity (L=200 mum). Single lateral mode operation was obtained by reducing the ridge width. This laser operates at...
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