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Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells on InP with the bandgap wavelength longer than 2 mum are analyzed by using 6- and 8-band kmiddotp theory. It is demonstrated that the 8-band model is indispensable for the analysis of highly strained In(Ga)As/InGaAs quantum wells due to the strong coupling between conduction and valence bands induced by large strain in the...
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