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Using an electron cyclotron resonance source in a UHV system, vacuum connected to an adjacent molecular beam epitaxy, carbon doping in GaAs was obtained and applied to the base of a heterojunction Npn bipolar transistor. The devices fabricated on the heterostructures grown as described exhibited current gains of about 50. After subjecting the layers to a 700 degrees C/20 minutes anneal cycle, the...
The authors report a gate array based on heterojunction bipolar transistors (HBTs) and using ECL/CML (emitter-coupled-logic/current-mode-logic) circuits. The transistors employed have f/sub t/ values up to 43 GHz. Frequency dividers based on gate-array macrocells have shown flip-flop toggle rates up to 7.0 GHz. A device technology and circuit approach targeted at ultrahigh speeds are used. The HBTs...
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