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The avalanche behavior of 650V and 1200V SiC Merged-PN-Schottky diodes was investigated as function of temperature by means of electrical measurements, simulation and optical detection of the avalanche rated electroluminescence. A very good fit between the simulated and experimentally determined breakdown field strengths could be achieved. The TC of the avalanche was 0.14V/K resp. 0.35V/K for the...
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