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Even though 3D flash memory presents a grand opportunity to huge-capacity non-volatile memory, it suffers from serious program disturbance problems. In contrast to the past efforts in error correction codes and the work in trading the space utilization for reliability, we propose a disturbance-relaxation scheme that can alleviate the negative effects caused by program disturbance inside a physical...
With the rapidly-increasing capacity demand over flash memory, 3D NAND flash memory has drawn tremendous attention as a promising solution to further reduce the bit cost and to increase the bit density. However, such advanced 3D devices will suffer more intensive program disturbance, compared to 2D NAND flash memory. Especially when multi-level-cell (MLC) technology is adopted, the deteriorated disturbance...
A high voltage power vertical double-diffused MOSFET with reduced JFET area by using an overall implantation was discussed. The reduced JFET area realizes a low gate charge and a high switching speed, due to the reduction of the gate-drain overlapped area. The measured gate-drain charge and gate charge can be improved by 61.1% and 71.8 %, respectively. The F.O.M of the proposed device and the conventional...
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