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This paper reports the floating-body-correlated subthreshold behavior of the SOI NMOS device considering the back-gate-bias effect. As verified by the experimentally measured data, when the channel length shrinks from 1µm to 120nm, the subthreshold slope becomes steeper due to the dominance of the parasitic BJT in the thin film. For the channel length becomes smaller further to 60nm, the subthreshold...
This paper reports the subthreshold characteristics of the SOI NMOS device considering the floating body effects. As verified by the experimentally measured data, as the channel length is scaled down from 1μm to 120nm, the subthreshold slope is steeper as a result of the dominance of the parasitic BJT in the thin film. For the channel length further scaled down to 60nm, its subthreshold behavior is...
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