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Few-layer phosphorene MOSFETs with 0.3-µm-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance associated mainly with the relatively large probe pads. The gate lag and drain lag of the transistor was found to be on the order of 1 µs or less, which...
This invited paper reviews our recent progress in silicon microresonator-based passive devices for potential on-chip optical interconnect applications. Specifically, we report our proposals and initial demonstrations of (i) many-element cascaded microdisk resonators as optical delay lines, and (ii) cascaded microring switch matrix. We also report our study on surface-state absorption-induced thermo-optical...
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