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This paper proposes very fast (more than Tera (10 12 ) Hz) and very small (less than a few nm) devices, atom relay transistors (ART) and molecular single electron switching transistors (MOSES), which would supersede the MOSFET (metal-oxide-semiconductor field effect transistor) for future information processing. Their performances are evaluated on the basis of the characteristics necessary...
The atomic and electronic structures of several atomic wires have been examined using first-principles calculations within the local density functional approach. first, we have examined dangling-bond wires which were constructed by extracting hydrogen atoms from a H-terminated Si(100)-(2 1) surface, and found that these wires have different characteristics in their electronic structure depending...
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