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The Ge/Si (100) nanostructures have been studied by atomic force microscopy (AFM) and Micro Raman optical spectroscopy. Two layers of Ge of total thickness 0.75nm and Si cap with thickness 2.5nm were deposited by the method of molecular beam epitaxy at the temperature range 640–700°C. AFM shows both quantum dots and ring-shape Ge nanostructures. From the analysis of the intensity and energy shift...
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