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In this paper, we first review the theoretical model and numerical algorithm for the simulation study of the surface plasmon (SP) coupling with a radiating dipole in an InGaN/GaN quantum well to demonstrate the advantages of SP-coupled light-emitting diode (LED) in the visible range, including internal quantum efficiency enhancement, droop effect reduction, and modulation bandwidth increase. Then,...
The radiated power enhancement (suppression) of a c-plane (c-axis) oriented radiating dipole at a given emission wavelength in the quantum well of a c-plane, deep-UV light-emitting diode (LED) when it is coupled with a surface plasmon (SP) resonance mode induced on a nearby Al nanoparticle (NP) is demonstrated. Also, the enhanced radiated power mainly propagates in the direction from the Al NP toward...
Further enhancement of the efficiency of an InGaN/GaN quantum well (QW) light-emitting diode (LED) through QW coupling with surface plasmons generated on Ag nano-gratings by inserting a SiO2 layer between semiconductor and metal is demonstrated.
The efficiency droop effect of a light-emitting diode is significantly reduced through the coherent coupling of its emitting quantum wells with the surface plasmons generated on the fabricated Ag structure on the device top surface.
Further enhancement of the polarized emission efficiency of an InGaN/GaN single quantum well (QW) light-emitting diode (LED) with the QW coupling with surface plasmon generated on an Ag nano-grating structure on the top of the LED by inserting a SiO2 layer between semiconductor and metal is demonstrated.
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