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In this letter, the bowtie-radial and balanced dual-radial PA architectures are proposed to combine 4-way and 8-way power units. Moreover, they also make breakthrough on the power area density (PAD) performances of -way combined PAs. These two CMOS PAs can both achieve the highest output power of 26.1 dBm at 23.5 GHz with PAD of 635 and 23 dBm at 60 GHz with PAD of 277...
A radiation hardened 256K-bit asynchronous SRAM is presented. It is fabricated by a 0.5-micron, radiation hardened CMOS PDSOI process with 3 layers of metal. It features 800uA stand-by current, 42ns access time, 300K rad(Si) total dose tolerant and 1.5 × 1011rad (Si)/s dose rate survivability. A 28-pin DIP package is used. The circuit operates with ambient temperature from -55 to +125°C and power...
In this paper, a 14-bit low power self-timed differential SAR ADC with a new structure high precision multi-segment bandgap reference (BGR) is presented. In this design, Self-timed bit-cycling is adopted to enhance the time efficiency. Gray coding form mode control words are utilized instead of binary for mode control to reduce substrate noise and enhance the linearity of the whole system.
Ultra-wideband (UWB) is an emerging broadband wireless technology enabling data rates up to 480Mb/s. To allow world-wide operability the WiMedia Alliance addresses three frequency band groups (BGs): BG1 (3168-4752MHZ), BG3 (6336-7920MHz) and BG6 (7392-8976MHz). With an application as wireless USB, highly integrated all-CMOS SoCs offer competitive advantages over less integrated approaches. Here we...
0.2 mum thin SOS film was modified by solid phase epitaxy using Si implantation. PMOS and NMOS devices and 54HC04 circuits were fabricated by the film. The DC characteristics of CMOS devices were measured. The transient irradiation and total dose irradiation test were put up. It was shown that fabricated integrated circuits have not only quite good electrical characteristics but also excellent transient...
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