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This paper discusses development of a 6-24 GHz mixer in a novel chip scale package. The mixer and package was fabricated together using Avago's enhancement mode (E-mode) PHEMT technology. This chip scale package is high performance, low cost and it totally eliminates all the assembly steps (such as die attach, bond wire etc) required to package a singulated die in a package. The mixer has been tested...
First principle calculations for the electronic and optical properties of cubic and wurtzite InN have been performed within generalized gradient approximation (GGA) using full potential linear augmented plane wave (FPLAPW) method as implemented in WIEN2k code. Our calculations show total energy for wurtzite structure of InN is smaller by 0.018 which predicts greater stability than cubic InN. The valence...
Indium nitride (InN) is an important and mysterious III-nitride semiconductor with many potential applications. During the last few years the interest in InN. has been remarkable. The use of InN and its alloys makes it possible to extend the emission of nitride-based Light Emitting Diodes (LEDs) from ultraviolet to near infrared region. In recent years an exciting conflict has arisen regarding the...
Interdiffusion in InxGa1-x As/GaAs QDs may occur during growth and subsequent device processing steps. As monitored through photoluminescence (PL), the experimental results on the annealing of InxGa1-x As/GaAs QDs depicts one particular phenomenon, that is, the initially observed PL spectrum is very broad. After annealing, the PL peak undergoes a blueshift and the full width at half maximum (FWHM)...
During epitaxial growth and processing, III-V nanostructures are likely to undergo several periods' high temperature cycling which lead to interdiffusion of the elements involved. Recently unusual experimental Photoluminescence (PL) results of annealing of the important InGaAs/InP quantum wells have been reported, where the PL peak energy increases monotonically on annealing at higher temperatures...
In this article, the method of resonant tunneling through a double-pair potential barrier to induce spin-polarized current in the 2D-electron gas (2DEG) of a high-electron-mobility-transistor (HEMT) heterostructure is discussed. The effect of electrical barriers which can be conveniently established by applying electrical voltage to the ferromagnetic gates of the HEMT device. The electrical potential...
We report operation of terahertz quantum-cascade lasers at frequencies down to 1.86 THz (lambda ap 161 mum) using a single quantum-well injector that significantly reduces free-carrier losses. The laser threshold current density at 5 K was ~140 A/cm2.
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