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Facial expression recognition (FER) has been applied for human-robot interaction (HRI). An assistant robot having a close interaction with human being should be able to recognize human facial expression. FER is a non-trivial problem because each individual has his own way to reveal his emotion and the facial expressions of two different persons may not be totally identical. Facial expression can be...
Growth and characterization of GaAs/AlGaAs core-shell nanowires (NWs) are reported. Using the VLS (vapor-liquid-solid) mechanism, GaAs NWs oriented perpendicularly to the substrate were grown on GaAs (111) B substrate. Using the metalorganic chemical vapor deposition (MOCVD) growth mode, AlGaAs shells were grown on GaAs NWs sidewalls. Single crystal and pure zinc-blende structure are achieved for...
Three samples of GaAs NWs grown with different n-type dopants flux rates were researched. From SEM figures, we can find that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n-type dopant SiH4. Larger SiH4 flux rate results in larger growth rate of NWs. For n-doped NWs, their growth were affected by Gibbs-Thomson effect, which is...
We have investigated the growth and photoluminescence (PL) characteristics of GaAs/AlGaAs core-multishell nanowires (NWs). Theses NWs are grown by means of vapor-liquid-solid (VLS) method for cores growth and metalorganic chemical vapor deposition (MOCVD) for multishell growth on GaAs (111)B substrate. The crystallographic quality is perfect in the body of GaAs/AlGaAs core-multishell NWs and a small...
GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs(111)B substrates via Au catalyzed vapor-liquid-solid mechanism. We found that the grown nanowires are rode-like shape and the growth rate is independent on its diameters. It can be concluded that the nanowire was grown with main contributions from direct impingement of vapor species onto the Au-Ga droplets and with negligible...
InP nanowires were grown on InP(100) substrates via VLS mechanism with Au particles as catalyst. Various morphologies of the nanowires such as straight, L-branch, Y-branch, K-branch, bottle-shape, cone-shape, needle-shape were obtained.
GaAs nanowires were grown on GaAs(111)B substrates via VLS mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in larger diameters, more dispersed size distribution, and lower density of the nanowires. The growth rate is independent on diameters, while it decreases with the density.
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