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Some key technical issues are addressed for improving electromagnetic compatibility (EMC) design of metallic shielding cavity for achieving better RF performance of LDMOSFET-based power amplifier (PA). With the help of an Automation Testing Bench, its input–output responses are at first measured and compared, where an interactive influence between the PA and PCB is studied in detail. The internal...
Shielding cover effects in LDMOS transistor are investigated in this paper. The internal and outer matching structures on the PCB are simulated using the commercial full-wave software HFSS. Under an Automation Testing Bench, the input-output responses of PA module are measured and compared. Finally, an improved scalable LDMOSFET PA model is proposed to predict three feedback path which give further...
Some improvements in the design of LDMOSFET power amplifier (PA) are demonstrated for effectively suppressing metallic shielding cover (MSC) effects. The internal and outer matching structures on the PCB are at first simulated and optimized using the commercial full-wave software HFSS. Further, they are integrated with the lumped-element circuit model of die and co-simulated using the software ADS...
This paper presents the study of electro-thermo-mechanical responses of bonding wire arrays used for the design of lateral double-diffused MOSFET-based RF amplifier. We at first show a series of ruggedness measurements of bonding wire arrays with a mismatch control system and an IR microscopy used for accurately predicting their surface temperatures. Further, an in-house time-domain finite element...
Shielding cover effects on the RF performance of LDMOSFET power amplifier (PA) is investigated. In our measurement, the PA cover is made of aluminum, with its height adjusted from 8.4 to 14.4mm which are widely used in current wireless communication application. The input-output responses of several PA samples with cover are measured and compared for different cover heights. Both experiment and simulation...
In this paper, effects of Transient Thermal Analysis for active devices (including GaAsFET, GaNHFET and LDMOSFET) under high power pulse in the communication systems are investigated. By using hybrid finite element methods, for example, the element-by-element finite element method (EBE-FEM) and the preconditioned conjugate gradient (PCG) technique, the thermal responses of the GaAsFET, GaNHFET, and...
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