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This paper reports on a novel four-degree-of-freedom solid state joystick. It consists of a rigid polymer cylinder with spherical dome on top of a CMOS chip. The sensor chip with a size of 2.0times2.5 mm2 contains 10 octagonal stress sensors distributed across the surface exploiting the shear piezoresistive effect in silicon. The joystick shows a linear response of its integrated stress sensors to...
We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the...
We present experimentally obtained results of the piezoresistive effect in p-type silicon and strained Si 0.9 Ge 0.1 . Today, strained Si 1−x Ge x is used for high speed electronic devices. This paper investigates if this area of use can be expanded to also cover piezoresistive micro electro mechanical systems (MEMS) devices. The measurements are performed on microfabricated...
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