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A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blue shift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs hetero-structures. Significant electroluminescence is observed for the device under forward biases, which suggests that pronounced dipole transitions...
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