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In situ etching and epitaxial growth have been performed on 4H-SiC 4° off-axis substrates with 100mm diameter. In situ etching process optimizations lead to obtain step-bunching free epilayer surfaces with roughnesses of 0.2nm and 0.8nm, which were grown on the substrates with and without chemical mechanical polishing, respectively. Yet the epilayer surfaces free of step-bunching are more likely to...
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