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To improve the ultrasonic bondability and antioxidation property of pure Cu pad, multi-layer structures of Ti/Cu/TaN/Ag are deposited on Si substrate with magnetron sputtering technology. The as-deposited multi-layers had uniform thicknesses and smooth surface with the roughness of 2.098nm. X-Ray diffraction analysis indicated that both Ag and Cu layers had deposited with (111) preferred orientation,...
Aluminum has been widely used in integrated circuit (IC) chip interconnect As the IC feature sizes continue to shrink, the RC delay of the interconnect wire has become the main delay of the system, instead of the intrinsic gate delay. For the higher speed responsibility, the resistance of the interconnects should be reduced. Copper interconnect has become the only one option for the semiconductor...
To improve the bondability of copper chip interconnect, a Si/Ti-Cu-Ag structure was designed and fabricated using evaporation method. Some analytical methods such as SEM, AFM, XRD and XPS were used to characterize the Ag nanofilm metallization and its bondability. It was found that the evaporated Ag metallization has good surface state and samll particle size, which could diffuses readily in the wire...
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