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To discuss the electromigration reliability of the copper chip interconnect, a transient non-linear dynamic and electrical finite element framework was developed. The simulation includes two major areas: one is the impact of the electromigration caused by current density and another one is the stress-migration relate to thermal-stress distribution in Cu interconnects. It was found that compared with...
To improve the bondability of copper chip interconnect, a Si/Ti-Cu-Ag structure was designed and fabricated using evaporation method. Some analytical methods such as SEM, AFM, XRD and XPS were used to characterize the Ag nanofilm metallization and its bondability. It was found that the evaporated Ag metallization has good surface state and samll particle size, which could diffuses readily in the wire...
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