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Heating effect of sub-THz radiation on Si Wafer is studied by using a Gyrotron FU CW V as a sub-THz radiation source. Increasing rate of the temperature is measured for several frequencies ranged from 75 GHz to around 200 GHz. The highest increasing rate reaches 39 degree/sec at the frequency of 203 GHz at 100W. The skin effect of sub-THz radiation is considered to analyze the measurement results.
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