The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Hot carrier (HC) reliability of gate-all-around twin Si nanowire field effect transistor (GAA TSNWFET) is reported and discussed with respect to size and shape of nanowire channel, gate length, thickness and kind of gate dielectric in detail. Smaller nanowire channel size, shorter gate length and thinner gate oxide down to 2 nm thickness show worse hot carrier reliability. The worst VD for 10 years...
Impacts of electron trapping/detrapping on the negative bias temperature instability (NBTI) characteristics in silicon nanowire transistors (SNWTs) with metal gates are experimentally studied in this paper. It is demonstrated that large amounts of as-grown defects, including both electron traps and hole traps, are induced by nanowire structure due to multiple surface crystal orientations of the cylinder...
We proposed and successfully demonstrated Si-on-ONO (SOONO) devices for fully depleted SOI transistor and 4 bit flash memory applications. In terms of HP transistor, SOONO MOSFETs showed good SCE immunity and high driving currents. In terms of a 4-bit flash memory, SOONO MOSFETs with ONO layers as their gate dielectrics showed clear 4-bit operation using the physically separated 4 storage nodes of...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.