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In the study, the direct robust active bonding (DRAB) between Si chip and Al heat sink by using of low melting point Sn-Ag-Ti (SAT) active solder is obtained at 250°C in air. The bonding process was done without flux and without the need for pre-metallization of Al heat sink or a protective atmosphere. The bonded joints were studied using SEM and the distribution of elements using energy-dispersive...
Next generation flip chip package with <100um fine bump pitch is developed in a cost effective Bump-on-Trace (BOT) package structure for 28nm Si technology node. This is foreseen to be a mainstream for mobile applications in next generations. The key challenges of this new technology include warpage control of molded underfill (MUF) for < 4 mils of thin die, packaging yield due to finer pitch...
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