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Damage-free metal-assisted chemical etching (MacEtch) was used to fabricate InP junctionless FinFETs with ultra-high aspect ratio (∼ 45∶1) fins. For devices with Lg = 560 nm, 20 – 32 nm fin width, and 600 nm active fin height, Ion/Ioff ∼ 106, and near-ideal subthreshold swing (70 mV/dec) were achieved.
The primary test stand (PTS) is a high-current accelerator for Z-pinch experiment at China Academy of Engineering Physics. In this paper, a circuit model for its magnetically insulated transmission lines (MITLs) have been developed, in which all the PTSs transmission line (TL) sections from water TLs, to vacuum insulator stack, to both outer and inner MITLs, and eventually to a wire array load, have...
Multiplexing Antenna Arrays is the anti- interference key technology of 4G mobile communication . The core is the antenna pattern synthesis. Yet some of the algorithm have the problem of needing lots of data, high computational complexity and slow speed of convergence. In this paper the antenna pattern synthesis based on particle swarm optimal algorithm is presented, improved PSO parameter settings,...
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