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Trap generation under BTI/TDDB stress for extremely scaled NMOSFETs and PMOSFETs is investigated. Trap identification and localization using SILC Spectrum technique is demonstrated. It has been verified that BTI/TDDB stress leads to trap generation primarily at IL/HK intermix for PMOSFETs, and primarily at HK layer in case of NMOSFETs. The advantage of this technique is it requires minimal post measurement...
Monotonous increase of saturation drain current Idsat but linear-region drain current Idlin reduction during hot carrier injection (HCI) stress is observed in N-type Lateral Diffused MOSFET. But the phenomenon of Idsat increase is contrary to what we typically observed during HCI stress. The increase of Idsat has been attributed to the increase of saturation substrate current Ibsat after HCI stress...
A model predicting the negative bias temperature instability (NBTI) reliability of high performance nitrided oxides is developed from discrete p-type metal-oxide-semiconductor field effect transistor (PMOSFET) data and verified with ring oscillator degradation in various frequencies for up to 1 GHz. Based on the experimental data and the simulation results, hole traps generation is considered to be...
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