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The nonvolatile memory thin-film transistor (MTFT) using a solution-processed zinc–tin oxide (ZTO) semiconducting channel and a poly(vinylidene fluoride-trifluoroethylene) ferroelectric gate insulator was proposed. The crystalline phases of spin-coated ZTO films were essentially amorphous even when the films were annealed at 500°C and the surface morphology was very smooth and uniform. Although the...
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