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A GaInN/GaN multiquantum shell (MQS) structure grown over GaN nanowires can be utilized as active regions in optoelectronic devices because of its advantages such as high crystalline quality and the absence of internal polarization. To improve the current injection toward the sidewall of the MQS active regions, a tunnel junction (TJ) and n‐GaN‐embedded cap layer are adopted without using an indium‐tin‐oxide...
The aim of this research is to realize high‐efficiency light‐emitting diodes (LEDs) with a 3D core‐shell GaN nanowire. This article describes the growth of 3D core‐shell GaN nanowires, the formation of indium tin oxide (ITO) around the p‐GaN outer shell of the nanowires, and the characteristics of the fabricated nanowire‐LED (NW‐LED). The structural properties of the n‐GaN core, GaInN/GaN multiquantum...
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