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Multiplication and avalanche excess noise measurements have been undertaken on a series of AlInP homo-junction p-i-n and n-i-p diodes with $i$ region widths ranging from 0.04 to 0.89 $\mu \text{m}$ , using 442 and 460 nm wavelength light. Low dark currents of <170 nA cm$^{\mathrm {-2}}$ at 95% of breakdown voltage were obtained in all the devices because of its wide bandgap and there was no...
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