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InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by...
We numerically investigate UTC PD structures that use highly diffusible beryllium (Be) as the p-type impurity in absorption layer An intrinsic InGaAs layer is added between the absorption layer and collection layer as a diffusion buffer. The influence of this buffer layer is analyzed, and the results obtain shows that high responsivity and high speed can be achieved.
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