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MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime [1, 2]. From this viewpoint, attentions have recently been paid to III-V and Ge channels. This is because III-V semiconductors have extremely high electron mobility and low electron effective mass and Ge has extremely high...
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs in the future, because of the enhanced carrier transport properties. However, the device/process/integration technologies of Ge/III-V n- and pMOSFETs for satisfying requirements of future node MOSFETs have not been established yet. In this paper,...
We have successfully demonstrated the CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate, by using direct wafer bonding (DWB), for the first time. Ni-based metal S/D allows us to fabricate high performance nMOSFETs and pMOSFETs simultaneously at the single-step S/D formation process. The fabricated InGaAs nMOSFET and Ge...
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